Schottky Barrier Diode(SBD)
YSD-series devices are Schottky barrier diodes designed for microwave and millimeter-wave use. These diodes are fabricated on GaAs (Gallium Arsenide), which is a high-speed semiconductor, and have characteristics of low capacitance and low loss. The packaged device has a cavity structure, which is made of polyimide flex substrate, and is applicable up to 40 GHz. YSD-series devices are suitable to detectors for sensors and to mixers for communication equipment. Bare-die parts are available for higher-frequency applications.
Packaged SBD <YSD040SLPP01>
Bare Die SBD <YSD080SLBD01> <YSD110SLBD01>
S-Parameters ( .S2P)
|Va = +0.75V||YSD040SLPP01P075||YSD080SLBD01P075||YSD110SLBD01P075|
|Va = 0.0 V||YSD040SLPP01P000||YSD080SLBD01P000||YSD110SLBD01P000|
|Va = -4.0 V||YSD040SLPP01M400||YSD080SLBD01M400||YSD110SLBD01M400|
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Ryoden Trading Co., Ltd.
Toshima-ku, Tokyo 170-8448 Japan
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